The demand for high voltage, high temperature, and high frequency applications continues to grow, and gallium oxide (Ga2O æ) is becoming a strong competitor for the next generation of power semiconductor devices. This is particularly true in the fields of electric vehicles, power grid systems, and aerospace. Compared with vapor grown silicon carbide and gallium nitride, gallium oxide crystals can be produced using a melt growth method similar to silicon crystals. This provides greater potential for cost reduction. At present, the industry has achieved mass production of 4-inch gallium oxide single crystals and is expected to expand to 6-inch in the coming years.

At the same time, significant progress has been made in the structural design and manufacturing process of Schottky diodes and transistors based on gallium oxide materials. The first batch of Schottky diode products is expected to be launched on the market in 2024 and may become the first commercial scale gallium oxide power component. Although gallium oxide still faces challenges such as poor thermal conductivity and lack of P-type doping, commercialization is expected to be imminent with the participation of major manufacturers in the power semiconductor industry and the driving force of key applications.